VB20200C-E3/8W【PDF 1/5 页】DIODE 20A 200V DUAL SCHOTTKY

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V20200C, VF20200C, VB20200C & VI20200C

Vishay General Semiconductor

Document Number: 89072

Revision: 24-Jun-09

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

New Product

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Ultra Low VF

= 0.60 V at I

= 5 A

FEATURES

? Trench MOS Schottky technology

Low forward voltage drop, low power

losses

High efficiency operation

Low thermal resistance

Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

Solder bath temperature 275 °C maximum, 10 s,

per JESD 22-B106 (for TO-220AB, ITO-220AB and

TO-262AA package)

Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, dc-to-dc

converters and reverse battery protection.

MECHANICAL DATA

Case:

TO-220AB, ITO-220AB, TO-263AB and

TO-262AA

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Terminals:

Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

Polarity:

As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

IF(AV)

2 x 10 A

VRRM

200 V

IFSM

120 A

VF at IF

= 10 A 0.68 V

max. 150 °C

TO-220AB

V20200C VF20200C1

TO-263AB

TO-262AA

PIN 1

PIN 2

HEATSINK

PIN 1

PIN 2

CASE

PIN 3

PIN 1

PIN 2

PIN 3

PIN 1

PIN 2

PIN 3

VI20200C

VB20200C

TMBS?

ITO-220AB

MAXIMUM RATINGS (TA

= 25 °C unless otherwise noted)

PARAMETER SYMBOL V20200C VF20200C VB20200C VI20200C UNIT

Maximum repetitive peak reverse voltage VRRM

200 V

Maximum average forward rectified current (fig. 1)

per device

per diode

IF(AV)

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load per diode

IFSM

120 A

Non-repetitive avalanche energy

at TJ

= 25 °C, L = 60 mH per diode

EAS

100 mJ

Peak repetitive reverse current at tp

= 2 μs, 1 kHz,

= 38 °C ± 2 °C per diode

IRRM

0.5 A

Voltage rate of change (rated VR) dV/dt 10 000 V/μs

Isolation voltage (ITO-220AB only)

from terminal to heatsink t = 1 min

VAC

1500 V

Operating junction and storage temperature range TJ, TSTG

- 40 to + 150 °C

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